JPS6146066B2 - - Google Patents

Info

Publication number
JPS6146066B2
JPS6146066B2 JP55030649A JP3064980A JPS6146066B2 JP S6146066 B2 JPS6146066 B2 JP S6146066B2 JP 55030649 A JP55030649 A JP 55030649A JP 3064980 A JP3064980 A JP 3064980A JP S6146066 B2 JPS6146066 B2 JP S6146066B2
Authority
JP
Japan
Prior art keywords
region
type
mesa portion
guard ring
depth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55030649A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56126968A (en
Inventor
Takeshi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3064980A priority Critical patent/JPS56126968A/ja
Priority to US06/228,637 priority patent/US4450469A/en
Priority to CA000371372A priority patent/CA1148270A/en
Publication of JPS56126968A publication Critical patent/JPS56126968A/ja
Publication of JPS6146066B2 publication Critical patent/JPS6146066B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP3064980A 1980-03-10 1980-03-10 Semiconductor device Granted JPS56126968A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP3064980A JPS56126968A (en) 1980-03-10 1980-03-10 Semiconductor device
US06/228,637 US4450469A (en) 1980-03-10 1981-01-26 Mesa type semiconductor device with guard ring
CA000371372A CA1148270A (en) 1980-03-10 1981-02-20 Mesa type semiconductor device with guard ring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3064980A JPS56126968A (en) 1980-03-10 1980-03-10 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56126968A JPS56126968A (en) 1981-10-05
JPS6146066B2 true JPS6146066B2 (en]) 1986-10-11

Family

ID=12309646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3064980A Granted JPS56126968A (en) 1980-03-10 1980-03-10 Semiconductor device

Country Status (3)

Country Link
US (1) US4450469A (en])
JP (1) JPS56126968A (en])
CA (1) CA1148270A (en])

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2568724A1 (fr) * 1984-08-03 1986-02-07 Centre Nat Rech Scient Composant semi-conducteur de puissance a tension de claquage elevee
JPH0644623B2 (ja) * 1984-08-22 1994-06-08 三菱電機株式会社 半導体装置の製造方法
EP0262356B1 (de) * 1986-09-30 1993-03-31 Siemens Aktiengesellschaft Verfahren zur Herstellung eines pn-Übergangs hoher Spannungsfestigkeit
DE3867371D1 (en) * 1987-08-11 1992-02-13 Bbc Brown Boveri & Cie Gate-turn-off-thyristor.
DE59913394D1 (de) * 1998-10-23 2006-06-08 Infineon Technologies Ag Leistungshalbleiter und herstellungsverfahren
JP4087543B2 (ja) * 2000-02-23 2008-05-21 三菱電機株式会社 半導体装置
JP4011848B2 (ja) * 2000-12-12 2007-11-21 関西電力株式会社 高耐電圧半導体装置
JP2004288680A (ja) 2003-03-19 2004-10-14 Mitsubishi Electric Corp 圧接型半導体装置
JP2006099936A (ja) * 2004-08-30 2006-04-13 Hoya Corp 磁気ディスク用ガラス基板の製造方法、磁気ディスクの製造方法及びガラス基板用の円柱状ガラス母材
JP4936670B2 (ja) * 2005-01-11 2012-05-23 三菱電機株式会社 電力用半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3341380A (en) * 1964-12-28 1967-09-12 Gen Electric Method of producing semiconductor devices
US4003072A (en) * 1972-04-20 1977-01-11 Sony Corporation Semiconductor device with high voltage breakdown resistance
JPS5414677A (en) * 1977-07-06 1979-02-03 Hitachi Ltd Semiconductor device
JPS54101279A (en) * 1978-01-27 1979-08-09 Hitachi Ltd Semiconductor device
CH633907A5 (de) * 1978-10-10 1982-12-31 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement mit zonen-guard-ringen.
DE2846637A1 (de) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen

Also Published As

Publication number Publication date
JPS56126968A (en) 1981-10-05
US4450469A (en) 1984-05-22
CA1148270A (en) 1983-06-14

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